ΑΝΑΚΟΙΝΩΣΗ
(2ης διάλεξης από τον Dr. Alon Ascoli)
Την Παρασκευή 16 Δεκεμβρίου και ώρα 14:10 στην αίθουσα διδασκαλίας του ΠΜΣ Ηλεκτρονικής Φυσικής 213 (γυάλινο κτίριο) θα πραγματοποιηθεί διάλεξη με τίτλο
«A Nonlinear Circuit-Theoretic Approach to Leverage the Rich Dynamics of Memristors for Circuit Design»
από τον Dr.-Ing. habil. Alon Ascoli
Affiliation: Chair of Fundamentals of Electrical Engineering, Technische Universität Dresden
Abstract: This lecture highlights the pivotal role, that nonlinear circuit and system theory is bound to play, in the years to come, to foster sustainable progress in circuit design with dynamically-rich memristors, especially volatile resistance switching memories blessed with the capability to act as local sources of energy upon suitable polarization [1]. The development of simple yet accurate models for disruptive nanodevices of this kind represents a crucial preliminary step toward the later conception of a systematic methodology to design memristive circuits for analogue electronics. With the availability of predictive device models, concepts and tools from nonlinear circuit and system theory can then be applied for a thorough investigation of the local and global dynamics of candidate circuit topologies for the execution of a pre-specified data processing task. Such a comprehensive analysis enables to partition the design parameter space into regions, in each of which the candidate circuit features a well-defined operating mode. This guides the designer toward the selection of an optimal parameter set, to ensure the candidate circuit would accomplish the earlier-specified task even under worst-case scenarios, when non-idealities perturb the analogue electronic system away from its nominal operating conditions. The proposed rigorous and systematic approach, grounded on the robust foundations of nonlinear circuit and system theory, shall be showcased for an exemplary case study, specifically the design of an oscillator, which leverages the emergence of negative differential resistance (NDR) effects in a NbOx memristor nanodevice from NaMLab [2], revealing also how the identification of another non-oscillatory operating regime of the circuit, uninteresting to all appearances, and yet enabled by our in-depth theoretical study, is instrumental for resolving one of the most controversial open issues in science, widely known as the Smale paradox [3].
References
[1] L.O. Chua, “Local activity is the origin of complexity,” International Journal of Bifurcation and Chaos, vol. 15, no. 11, pp. 3435–3456, 2005
[2] A. Ascoli, A.S. Demirkol, R. Tetzlaff, S. Slesazeck, T. Mikolajick, and L.O. Chua, “On Local Activity and Edge of Chaos in a NaMLab Memristor,” Frontiers in Neuroscience, 2021, DOI: 10.3389/fnins.2021.651452
[3] A. Ascoli, A.S. Demirkol, R. Tetzlaff, and L.O. Chua, “Edge of Chaos Theory Resolves Smale Paradox,” IEEE Trans. Circuits and Systems–I (TCAS–I): Regular Papers, vol. 69, no. 3, pp. 1252–1265, March 2022, DOI: 10.1109/TCSI.2021.3133627